Toshiba - TPC8109(TE12L)

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TPC8109(TE12L) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPC8109(TE12L)
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Maximum Drain Current (Abs) (ID): 10 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet TPC8109(TE12L) Datasheet
NAME DESCRIPTION
Other Names: TPC8109CT
TPC8109DKR
TPC8109TE12L
TPC8109TR
Maximum Power Dissipation (Abs): 1.9 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 10 A
Maximum Drain Current (Abs) (ID): 10 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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