TPC8223-H by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TPC8223-H
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 8; Package Style (Meter): SMALL OUTLINE;
Datasheet	TPC8223-H Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	52 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	55 pF
Maximum Drain Current (ID):	9 A
Maximum Pulsed Drain Current (IDM):	36 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.021 ohm

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