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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TPC8408,LQ(S |
| Description | N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | TPC8408,LQ(S Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
TPC8408LQS 264-TPC8408,LQ(SDKR-ND TPC8408LQ(S-ND TPC8408LQ(S 264-TPC8408,LQ(SDKR 264-TPC8408,LQ(SCT-ND 264-TPC8408LQ(SDKR 264-TPC8408LQ(SCT 264-TPC8408LQ(STR 264-TPC8408,LQ(SCT |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 6.1 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 2.2 W |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 6.1 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









