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Manufacturer | Toshiba |
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Manufacturer's Part Number | TPCF8103(TE85L,F) |
Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 2.7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | TPCF8103(TE85L,F) Datasheet |
NAME | DESCRIPTION |
---|---|
Maximum Power Dissipation (Abs): | 2.5 W |
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
No. of Elements: | 1 |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (ID): | 2.7 A |
Maximum Drain Current (Abs) (ID): | 2.7 A |
Sub-Category: | Other Transistors |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |