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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TPCF8306(TE85L) |
| Description | P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.35 W; Maximum Drain Current (ID): 3.2 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 3.2 A; |
| Datasheet | TPCF8306(TE85L) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 1.35 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 3.2 A |
| Maximum Drain Current (Abs) (ID): | 3.2 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |








