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Manufacturer | Toshiba |
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Manufacturer's Part Number | TPCP8206(TE85L,F) |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 47 pF; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; |
Datasheet | TPCP8206(TE85L,F) Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Feedback Capacitance (Crss): | 47 pF |
Maximum Drain Current (ID): | 6 A |
Sub-Category: | FET General Purpose Powers |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 20 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 6 A |
Maximum Drain-Source On Resistance: | .035 ohm |