TPCP8403 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TPCP8403
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.48 W; No. of Elements: 2; Maximum Pulsed Drain Current (IDM): 18.8 A;
Datasheet	TPCP8403 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	10.6 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	4.7 A
Maximum Pulsed Drain Current (IDM):	18.8 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1.48 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	4.7 A
Maximum Drain-Source On Resistance:	.105 ohm

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