TPCP8BA1 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TPCP8BA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;
Datasheet	TPCP8BA1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.3 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	125 Cel
Maximum Drain Current (Abs) (ID):	1.3 A
Maximum Drain-Source On Resistance:	.46 ohm

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