Toshiba - TPCP8J01

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TPCP8J01 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPCP8J01
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet TPCP8J01 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.5 A
Maximum Pulsed Drain Current (IDM): 22 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .049 ohm
Avalanche Energy Rating (EAS): 5.8 mJ
Polarity or Channel Type: P-CHANNEL
Minimum DC Current Gain (hFE): 80
Minimum DS Breakdown Voltage: 32 V
Qualification: Not Qualified
Peak Reflow Temperature (C): NOT SPECIFIED
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