TPCS8204 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TPCS8204
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	TPCS8204 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	46.8 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6 A
Maximum Pulsed Drain Current (IDM):	24 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
JESD-609 Code:	e4
No. of Terminals:	8
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.017 ohm

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