Toshiba - TPCS8212(TE12L)

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TPCS8212(TE12L) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPCS8212(TE12L)
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain Current (ID): 6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet TPCS8212(TE12L) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.1 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 6 A
Maximum Drain Current (Abs) (ID): 6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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