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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TPH1110FNH,L1Q |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | TPH1110FNH,L1Q Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 10 A |
| Maximum Pulsed Drain Current (IDM): | 32 A |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 57 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .112 ohm |
| Avalanche Energy Rating (EAS): | 58 mJ |
| Other Names: |
TPH1110FNH,L1QDKR-ND TPH1110FNHL1QCT TPH1110FNH,L1QCT-ND TPH1110FNH,L1QDKR TPH1110FNH,L1Q(M TPH1110FNHL1QTR TPH1110FNH,L1QTR-ND TPH1110FNH,L1QCT TPH1110FNH,L1QTR TPH1110FNHL1QDKR |
| Maximum Feedback Capacitance (Crss): | 50 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 250 V |
