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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | TPH1R403NL |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 30 V; |
| Datasheet | TPH1R403NL Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 355 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 60 A |
| Maximum Pulsed Drain Current (IDM): | 200 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Minimum DS Breakdown Voltage: | 30 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0021 ohm |
