Toshiba - TPHR9003NL,L1Q(M

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TPHR9003NL,L1Q(M by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPHR9003NL,L1Q(M
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; No. of Terminals: 5; Terminal Form: FLAT;
Datasheet TPHR9003NL,L1Q(M Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 889 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 200 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
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