Toshiba - TPN5900CNH,L1Q

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TPN5900CNH,L1Q by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPN5900CNH,L1Q
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 39 W; No. of Elements: 1; Peak Reflow Temperature (C): 260;
Datasheet TPN5900CNH,L1Q Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 39 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .059 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: TPN5900CNHL1QDKR
TPN5900CNHL1QCT
TPN5900CNH,L1Q(M
TPN5900CNHL1QTR
Maximum Feedback Capacitance (Crss): 50 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 150 V
Peak Reflow Temperature (C): 260
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