Toshiba - TPS608A-B

  1. Home
  2. Toshiba - TPS608A-B
TPS608A-B by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TPS608A-B
Description PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: ROUND; Additional Features: SIDE VIEW;
Datasheet TPS608A-B Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.5 mm
Minimum Operating Temperature: -25 Cel
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: .08 mA
Peak Wavelength (nm): 820
Additional Features: SIDE VIEW
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SFH313FA-2 by Infineon Technologies

SFH313FA-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel;
TPS605(LB) by Toshiba

TPS605(LB)

Toshiba

PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;
QSD124.A4R0 by Qt Optoelectronics

QSD124.A4R0

Qt Optoelectronics

QSD124.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 6mA, dark current of 100nA, and IR range. Ideal for applications requiring photo detection in various environments.
SFH3400-2 by Infineon Technologies

SFH3400-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;
SPS181C by Onsemi

SPS181C

Onsemi

SPS181C by Onsemi is a phototransistor with peak wavelength of 880nm. It operates b/w -20 °C to 75°C, dissipating max power of 0.07W. With max on state current of 0.02A and dark current at 200nA, it's ideal for through hole mounting in various applications.
SFH320-Z by Osram Opto Semiconductors

SFH320-Z

Osram Opto Semiconductors

SFH320-Z by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 980nm. It operates b/w -40 to 100°C, dissipating max power of 0.165W. Ideal for IR applications, it has a collector-emitter breakdown voltage of 35V and on-state current of 0.015A.
LS602 by Texas Instruments

LS602

Texas Instruments

LS602 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.
KDT00030 by Onsemi

KDT00030

Onsemi

The Onsemi KDT00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with nominal light current of 0.01mA and max dark current of 100nA. Ideal for applications requiring rectangular shape optoelectronic components in compact size.
QSC114 by Onsemi

QSC114

Onsemi

QSC114 by Onsemi is a 3mm phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has response time of 0.000007s, and can handle up to 0.1W power dissipation. Ideal for applications requiring IR detection in through-hole mounting configurations.
ALS-PT19-315C/L177/TR8 by Everlight Electronics

ALS-PT19-315C/L177/TR8

Everlight Electronics

Everlight Electronics' ALS-PT19-315C/L177/TR8 is a 1.2mm RECTANGULAR PHOTO TRANSISTOR with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with light current of 1.52mA and dark current up to 100nA. Ideal for SURFACE MOUNT applications at a supply voltage of 5V.
SDP8436-002 by Micro Switch

SDP8436-002

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s;
SFH309FA2 by Infineon Technologies

SFH309FA2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Peak Wavelength (nm): 900; Maximum On State Current: .015 A;
TPS616(AB,F) by Toshiba

TPS616(AB,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .02 A;
SFH320 by Infineon Technologies

SFH320

Infineon Technologies

SFH320 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has a max power dissipation of 0.165W, and can handle an on-state current of 0.015A. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.4mm and surface mount feature.
SFH303FA-4 by Infineon Technologies

SFH303FA-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel;
SFH300FA by Siemens

SFH300FA

Siemens

PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;
LS613 by Texas Instruments

LS613

Texas Instruments

LS613 by Texas Instruments is a single phototransistor with max temp of 125°C. It has nominal light current of 3mA and response time of 0.000008s. Ideal for applications requiring IR detection, it features a min breakdown voltage of 50V and through hole mounting.
SFH313FA-3 by Osram Opto Semiconductors

SFH313FA-3

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel; Size: 5 mm; Minimum Collector-emitter Breakdown Voltage: 70 V;
QSE113E3R0 by Fairchild Semiconductor

QSE113E3R0

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Nominal Light Current: .25 mA; Infrared (IR) Range: YES;
TPS613-AB by Toshiba

TPS613-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .02 mA; Peak Wavelength (nm): 720; No. of Functions: 1; Shape: ROUND;