Toshiba - TPW1R306PL,L1Q(M

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TPW1R306PL,L1Q(M by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPW1R306PL,L1Q(M
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Case Connection: DRAIN; Maximum Operating Temperature: 175 Cel;
Datasheet TPW1R306PL,L1Q(M Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 80 pF
Maximum Drain Current (ID): 260 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 170 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00129 ohm
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