Toshiba - TTA006B,Q

  1. Home
  2. Toshiba - TTA006B,Q
TTA006B,Q by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TTA006B,Q
Description Power Bipolar Transistors;
Datasheet TTA006B,Q Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BCP56-16-TP by Micro Commercial Components

BCP56-16-TP

Micro Commercial Components

Micro Commercial Components' BCP56-16-TP is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages. Suitable for surface mount designs operating b/w -55°C to 150°C.
TIP42A by Onsemi

TIP42A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP112 by Kec

TIP112

Kec

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
TIP42A by Motorola

TIP42A

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N3055H by Solitron Devices

2N3055H

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP31C by Micro Electronics

TIP31C

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP42C by Kec

TIP42C

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP115 by New Jersey Semiconductor Products

TIP115

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1; Transistor Element Material: SILICON;
BUV48A by Motorola

BUV48A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Turn Off Time (toff): 2400 ns;
TIP41CG by Changzhou Galaxy Century Microelectronics

TIP41CG

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP112 by Jiangsu Changjiang Electronics Technology

TIP112

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
NJVMJD31CT4G-VF01 by Onsemi

NJVMJD31CT4G-VF01

Onsemi

NJVMJD31CT4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 10, VCEO of 100V, and IC of 3A. Ideal for amplifier applications, it operates b/w -65 to 150°C and has a transition frequency of 3MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.
TIP117 by Bourns

TIP117

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500; Maximum Collector-Emitter Voltage: 100 V;
TIP125 by Power Innovations

TIP125

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;
BD139-16 by NXP Semiconductors

BD139-16

NXP Semiconductors

BD139-16 by NXP Semiconductors is a NPN BJT transistor with 80V VCE, 1.5A IC, and 100 hFE. It is ideal for amplifier applications with a max power dissipation of 8W in a through-hole package style. Operating up to 150°C, it offers a transition frequency of 190MHz for high-performance requirements.
BD139 by Baneasa S A

BD139

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; JEDEC-95 Code: TO-126;
MJE350 by SPC TECHNOLOGY/ MULTICOMP

MJE350

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
TIP31C by Solid State Devices

TIP31C

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP116G by Onsemi

TIP116G

Onsemi

TIP116G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max operating temperature of 150°C, and min DC current gain of 500 (hFE). The package style is flange mount with through-hole terminals.
TIP3055 by Continental Device India

TIP3055

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;