Toshiba - TTB1067B,Q

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TTB1067B,Q by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TTB1067B,Q
Description Power Bipolar Transistors;
Datasheet TTB1067B,Q Datasheet
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TIP147

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PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY;
BD138 by Crimson Semiconductor

BD138

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BD139 by Central Semiconductor

BD139

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TIP125 by New Jersey Semiconductor Products

TIP125

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP122 by Texas Instruments

TIP122

Texas Instruments

TIP122 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V, hFE of 1000, and IC of 5A. Ideal for switching applications due to its high current gain and low saturation voltage. With a max power dissipation of 65W, it can handle high-power loads efficiently.
TIP117 by Bourns

TIP117

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500; Maximum Collector-Emitter Voltage: 100 V;
TIP125 by General Transistor

TIP125

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TIP115 by Samsung

TIP115

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
TIP36C by Inchange Semiconductor

TIP36C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP47 by Texas Instruments

TIP47

Texas Instruments

TIP47 by Texas Instruments is a NPN Power BJT with 40W power dissipation, 250V max collector-emitter voltage, and 1A max collector current. Ideal for applications requiring high-power amplification in electronic circuits. Features single configuration, through-hole terminals, and silicon transistor element material.
TIP32C by Samsung

TIP32C

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
D44H11 by Onsemi

D44H11

Onsemi

D44H11 by Onsemi is a NPN BJT transistor with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
TIP125 by SPC TECHNOLOGY/ MULTICOMP

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JAN2N2905A by Vpt Components

JAN2N2905A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Package Style (Meter): CYLINDRICAL;
TIP42C by Inchange Semiconductor

TIP42C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD679 by Baneasa S A

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NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
BD679AS by Fairchild Semiconductor

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Fairchild Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP111 by STMicroelectronics

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
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Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
MJD45H11T4 by Onsemi

MJD45H11T4

Onsemi

The Onsemi MJD45H11T4 is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it features a small outline package, Gull Wing terminals, and operates up to 140°C.