Toshiba - TTC012

  1. Home
  2. Toshiba - TTC012
TTC012 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TTC012
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 100;
Datasheet TTC012 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.1 W
Maximum Collector-Emitter Voltage: 375 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ZTX951 by Zetex Plc

ZTX951

Zetex Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 10;
MJE340 by Continental Device India

MJE340

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
BD13916STU by Onsemi

BD13916STU

Onsemi

BD13916STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 12.5W Ptot. Ideal for switching applications, it has hFE of min. 100 and operates up to 150°C. The package is through-hole with matte tin finish, suitable for flange mount configurations.
BD243C by Onsemi

BD243C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP42C by STMicroelectronics

TIP42C

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD679 by Onsemi

BD679

Onsemi

BD679 by Onsemi is a NPN Power BJT with 40W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has hFE of 750 and can handle up to 80V collector-emitter voltage. This transistor operates at temperatures up to 150°C in a through-hole package style.
JAN2N2219A by Vpt Components

JAN2N2219A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MJD45H11T4 by Onsemi

MJD45H11T4

Onsemi

The Onsemi MJD45H11T4 is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it features a small outline package, Gull Wing terminals, and operates up to 140°C.
MJD45H11T4 by Motorola

MJD45H11T4

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
ZTX851 by Zetex Plc

ZTX851

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP41CG by Onsemi

TIP41CG

Onsemi

TIP41CG by Onsemi is a NPN power BJT with 65W max power dissipation, 100V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. Its package style is flange mount with through-hole terminals.
TIP35C by SPC TECHNOLOGY/ MULTICOMP

TIP35C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP3055 by Onsemi

TIP3055

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
2N3055 by Onsemi

2N3055

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
ZTX851 by Diodes Incorporated

ZTX851

Diodes Incorporated

ZTX851 by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 60V, max. collector current of 5A, and min. DC current gain of 100. It is used in power applications where high switching speeds up to 130MHz are required, operating at temperatures up to 200°C for efficient performance.
BDW93C by Central Semiconductor

BDW93C

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP36C by Bourns

TIP36C

Bourns

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;
TIP120 by Semiconductors

TIP120

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP147T by Samsung

TIP147T

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
D44H11 by New Jersey Semiconductor Products

D44H11

New Jersey Semiconductor Products

NPN; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Maximum Collector-Emitter Voltage: 80 V;