TTD1409B by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TTD1409B
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 6 A; Package Body Material: PLASTIC/EPOXY;
Datasheet	TTD1409B Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	6 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-220AB
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	100
No. of Terminals:	3
Maximum Power Dissipation (Abs):	25 W
Maximum Collector-Emitter Voltage:	400 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	260

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