Toshiba - TTK101MFV(TPL3)

  1. Home
  2. Toshiba - TTK101MFV(TPL3)
TTK101MFV(TPL3) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TTK101MFV(TPL3)
Description Other Transistors;
Datasheet TTK101MFV(TPL3) Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP115 by Philips Semiconductors

TIP115

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BC557B by Sprague Electric

BC557B

Sprague Electric

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;
FQP27P06_SW82127 by Fairchild Semiconductor

FQP27P06_SW82127

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BD243C by North American Philips Discrete Products Div

BD243C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;
TIP29C by Thomson Consumer Electronics

TIP29C

Thomson Consumer Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BC857B by Secos

BC857B

Secos

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP112 by North American Philips Discrete Products Div

TIP112

North American Philips Discrete Products Div

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
PMF170XP,115 by NXP Semiconductors

PMF170XP,115

NXP Semiconductors

NXP Semiconductors PMF170XP,115 is a P-CHANNEL FET with 1A max drain current and 0.36W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.
JANSR2N2222AUB by Hi-rel Components

JANSR2N2222AUB

Hi-rel Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3055H by Inchange Semiconductor

2N3055H

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
D44H8 by Semiconductor Technology

D44H8

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP127 by General Electric Solid State

TIP127

General Electric Solid State

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP147 by Inchange Semiconductor

TIP147

Inchange Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
2N3055 by Transpro Electronics

2N3055

Transpro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC847BS by Philips Semiconductors

BC847BS

Philips Semiconductors

NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 200; Terminal Finish: MATTE TIN;
BC847 by Plessey Semiconductors Discrete Components Div

BC847

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
PZT2222A by Secos

PZT2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
BD140 by Texas Instruments

BD140

Texas Instruments

The Texas Instruments BD140 is a PNP transistor with max power dissipation of 8W, hFE of 40, and IC of 1.5A. Ideal for applications requiring high current amplification such as audio amplifiers and power supplies due to its single configuration and high operating temperature of 150°C.
3001 by Asi Semiconductor

3001

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 175 Cel;
TIP147 by Semitronics

TIP147

Semitronics

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; JESD-609 Code: e0;