Toshiba - TW027N65C,S1F(S

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TW027N65C,S1F(S by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TW027N65C,S1F(S
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Drain Current (ID): 58 A; Terminal Form: THROUGH-HOLE;
Datasheet TW027N65C,S1F(S Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 6.6 pF
Maximum Drain Current (ID): 58 A
JEDEC-95 Code: TO-247
Maximum Pulsed Drain Current (IDM): 170 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 650 V
Maximum Power Dissipation (Abs): 156 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .037 ohm
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