Toshiba - ULN2803AFWG(O,ELM)

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ULN2803AFWG(O,ELM) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number ULN2803AFWG(O,ELM)
Description NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G18; Maximum Collector-Emitter Voltage: 50 V;
Datasheet ULN2803AFWG(O,ELM) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 1000
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
No. of Terminals: 18
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G18
No. of Elements: 8
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOGIC LEVEL COMPATIBLE
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