XPH3R114MC,L1XHQ by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	XPH3R114MC,L1XHQ
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Transistor Application: SWITCHING; Maximum Feedback Capacitance (Crss): 1110 pF;
Datasheet	XPH3R114MC,L1XHQ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	100 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	170 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-F8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0047 ohm
Avalanche Energy Rating (EAS):	173 mJ
Maximum Feedback Capacitance (Crss):	1110 pF
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101

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