Toshiba - XPW4R10ANB

  1. Home
  2. Toshiba - XPW4R10ANB
XPW4R10ANB by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number XPW4R10ANB
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
Datasheet XPW4R10ANB Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 70 A
Maximum Pulsed Drain Current (IDM): 210 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 170 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0062 ohm
Avalanche Energy Rating (EAS): 241 mJ
Maximum Feedback Capacitance (Crss): 300 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Reference Standard: AEC-Q101
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IPT020N10N3ATMA1 by Infineon Technologies

IPT020N10N3ATMA1

Infineon Technologies

IPT020N10N3ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1200A IDM, and 0.02 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
STP80NF10 by STMicroelectronics

STP80NF10

STMicroelectronics

STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
IRFR120NTRPBF by International Rectifier

IRFR120NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Position: SINGLE; Maximum Time At Peak Reflow Temperature (s): 30;
SQ2337ES-T1_GE3 by Vishay Intertechnology

SQ2337ES-T1_GE3

Vishay Intertechnology

The Vishay Intertechnology SQ2337ES-T1_GE3 is a P-CHANNEL Power FET with 80V DS Breakdown Voltage and 9A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
IRF640NLPBF by Infineon Technologies

IRF640NLPBF

Infineon Technologies

IRF640NLPBF by Infineon Technologies is a N-CHANNEL FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE at up to 175°C.
BUK9M85-60EX by Nexperia

BUK9M85-60EX

Nexperia

BUK9M85-60EX by Nexperia is a N-channel power FET with 60V DS breakdown voltage and 12.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.085 ohm max on resistance, and 51A pulsed drain current. Suitable for surface mount with Gull Wing terminals in a small outline package style.
IRFL9014PBF by Vishay Siliconix

IRFL9014PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G3; No. of Terminals: 3; No. of Elements: 1;
IRF7425TRPBF by International Rectifier

IRF7425TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
FDMS86101 by Onsemi

FDMS86101

Onsemi

FDMS86101 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.008 ohm RDS(on), and 135mJ EAS rating. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 104W in a small outline package.
IRF3710PBF by Infineon Technologies

IRF3710PBF

Infineon Technologies

IRF3710PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
SUM110P08-11L-E3 by Vishay Intertechnology

SUM110P08-11L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM110P08-11L-E3 is a P-channel FET with 80V DS breakdown voltage, ideal for switching applications. Features include 120A max pulsed drain current, 0.0112 ohm max RDS(on), and 375W max power dissipation. Suitable for enhancement mode operation in high-power circuits with operating temperatures ranging from -55 to 175°C.
SQJ479EP-T1_GE3 by Vishay Intertechnology

SQJ479EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ479EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 100A IDM, and 0.033 ohm RDS(ON). Ideal for power management applications in automotive electronics due to AEC-Q101 standard compliance.
BSC117N08NS5ATMA1 by Infineon Technologies

BSC117N08NS5ATMA1

Infineon Technologies

Infineon's BSC117N08NS5ATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 196A IDM, 14mJ EAS, and 0.0117 ohm RDS(on). With ENHANCEMENT MODE operation and DUAL terminal position, it offers high performance in a SMALL OUTLINE package.
DN3535N8-G by Supertex

DN3535N8-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
IRLML0100TRPBF-1 by International Rectifier

IRLML0100TRPBF-1

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; JEDEC-95 Code: TO-236AB; Terminal Form: GULL WING;
NDT3055L by Fairchild Semiconductor

NDT3055L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 25 A;
PSMN040-100MSEX by NXP Semiconductors

PSMN040-100MSEX

NXP Semiconductors

PSMN040-100MSEX by NXP Semiconductors is a single-channel N-CHANNEL power FET with a max drain current of 30A and max power dissipation of 91W. It operates in enhancement mode and is suitable for applications requiring high power and temperature resistance.
IRLML6244TRPBF by International Rectifier

IRLML6244TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 6.3 A; Package Shape: RECTANGULAR;
IRF5305PBF by International Rectifier

IRF5305PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLR024NTRPBF by Infineon Technologies

IRLR024NTRPBF

Infineon Technologies

Infineon's IRLR024NTRPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A IDM, 68mJ EAS, and 0.08 ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it offers reliable performance in various electronic systems.