Toshiba - YTFP252

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YTFP252 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number YTFP252
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation Ambient: 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
Datasheet YTFP252 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 110 ns
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 100 A
Surface Mount: NO
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 180 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 150 W
Maximum Drain-Source On Resistance: .12 ohm
Maximum Feedback Capacitance (Crss): 900 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
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