Toshiba - YTS2906TE85R

  1. Home
  2. Toshiba - YTS2906TE85R
YTS2906TE85R by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number YTS2906TE85R
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
Datasheet YTS2906TE85R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .6 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-236
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 8 pF
Maximum VCEsat: 1.6 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

KSC2223Y by Onsemi

KSC2223Y

Onsemi

KSC2223Y by Onsemi is an NPN RF BJT transistor with a VCEsat of 0.3V, hFE of 90, and fT of 600MHz. Ideal for amplifier applications in the very high-frequency band, it has a max operating temp of 150 °C and max collector current of 0.02A.
BFQ256A-TAPE-7 by NXP Semiconductors

BFQ256A-TAPE-7

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; No. of Terminals: 4;
2SC5536A-TL-H by Onsemi

2SC5536A-TL-H

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
AT-32032-TR1G by Broadcom

AT-32032-TR1G

Broadcom

Broadcom's AT-32032-TR1G is an NPN BJT transistor with a max power dissipation of 0.2W and a min DC current gain of 70. It is designed for S Band applications, featuring a small outline package shape and Gull Wing terminal form for surface mount assembly.
MPSA10RLRPG by Onsemi

MPSA10RLRPG

Onsemi

MPSA10RLRPG by Onsemi is an NPN RF BJT with 3 terminals, operating at up to 150 °C. It offers a max collector-emitter voltage of 25V and transition frequency of 650MHz. Ideal for applications requiring ultra-high frequency band performance in cylindrical package style.
2N5109 by Baneasa S A

2N5109

Baneasa S A

RF Small Signal Bipolar Transistors; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-39; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND;
934064589115 by NXP Semiconductors

934064589115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .04 A; Maximum Collector-Emitter Voltage: 2.8 V;
MPSA10 by Onsemi

MPSA10

Onsemi

MPSA10 by Onsemi is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in RF applications due to its ultra-high frequency band capability. The package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.
HFA3127BZ96 by Renesas Electronics

HFA3127BZ96

Renesas Electronics

Renesas Electronics' HFA3127BZ96 is an NPN RF BJT with 5 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 8V and a nominal transition frequency of 8000MHz. This surface-mount transistor has a small outline package with 16 terminals in gull-wing form.
HFA3134IHZ96 by Renesas Electronics

HFA3134IHZ96

Renesas Electronics

Renesas Electronics' HFA3134IHZ96 is an NPN RF BJT with 2 elements, ideal for amplifier applications in the UHF band. Features include VCEsat of 0.25V, hFE of 48, and fT of 3000MHz. With a max operating temp of 85°C and compact SOT package, it's suitable for high-frequency circuit designs.
MPSH10RLRP by Onsemi

MPSH10RLRP

Onsemi

MPSH10RLRP by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.35W and operates in the ultra-high frequency band.
MMBTH81_NL by Fairchild Semiconductor

MMBTH81_NL

Fairchild Semiconductor

MMBTH81_NL by Fairchild Semiconductor is a PNP RF BJT transistor with 3 terminals, suitable for amplifier applications in the VHF band. It has a max power dissipation of 0.35W, DC current gain of 60 (hFE), and operates at temperatures up to 150°C. This surface-mount transistor features a small outline package with gull wing terminals.
MPS5179RL1 by Onsemi

MPS5179RL1

Onsemi

MPS5179RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 900MHz. It is commonly used in amplifier applications due to its very high-frequency band capabilities. The transistor has a single configuration, cylindrical package style, and through-hole terminal form for easy integration.
MPS918RLRE by Onsemi

MPS918RLRE

Onsemi

MPS918RLRE by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates in the ultra-high frequency band and has a max collector-emitter voltage of 15V. Ideal for amplifier applications, it features a plastic/epoxy package body and can handle up to 0.05A collector current at 150 °C.
MSC2295-BT1 by Onsemi

MSC2295-BT1

Onsemi

The Onsemi MSC2295-BT1 is an NPN RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max operating temp of 150 °C, fT of 150 MHz, and hFE of 70. The package is small outline with gull wing terminals, suitable for surface mount assembly.
S822T by Vishay Semiconductors

S822T

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; JESD-609 Code: e3;
2N5583 by New Jersey Semiconductor Products

2N5583

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): CYLINDRICAL;
2N3010 by Texas Instruments

2N3010

Texas Instruments

2N3010 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 25, and fT of 600MHz. Ideal for switching applications due to its max. collector-emitter voltage of 11V and max. collector current of 0.5A in a cylindrical package with wire terminals.
2N3904 by Thomson-csf Semiconductors

2N3904

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified; Terminal Position: BOTTOM;
2SC5347AF-TD-E by Onsemi

2SC5347AF-TD-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;