Triquint Semiconductor - T2G6003028-FL

  1. Home
  2. Triquint Semiconductor - T2G6003028-FL
T2G6003028-FL by Triquint Semiconductor

Image shown is a representation only.

Manufacturer Triquint Semiconductor
Manufacturer's Part Number T2G6003028-FL
Description RF Power Field-Effect Transistors;
Datasheet T2G6003028-FL Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

A2V07H400-04NR3 by NXP Semiconductors

A2V07H400-04NR3

NXP Semiconductors

NXP Semiconductors A2V07H400-04NR3 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 18.9 dB Power Gain, and operates in the Ultra High Frequency Band. Ideal for amplifier applications, this transistor has a flatpack package style and operates b/w -40 to 225 °C.
PTFA091201EV4R250XTMA1 by Infineon Technologies

PTFA091201EV4R250XTMA1

Infineon Technologies

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
934061172112 by NXP Semiconductors

934061172112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT;
PTFA080551FV4R250XTMA1 by Infineon Technologies

PTFA080551FV4R250XTMA1

Infineon Technologies

Infineon's PTFA080551FV4R250XTMA1 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a CERAMIC/METAL-SEALED COFIRED package and operates in ENHANCEMENT MODE at up to 200°C.
A3T21H400W23SR6 by NXP Semiconductors

A3T21H400W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: FLAT; Maximum Operating Temperature: 225 Cel; Transistor Element Material: SILICON;
MRF186 by Motorola

MRF186

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified; Transistor Element Material: SILICON;
BLF177 by Asi Semiconductor

BLF177

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Maximum Drain Current (Abs) (ID): 16 A;
934061137118 by NXP Semiconductors

934061137118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 65 V;
PTVA101K02EVV1R250 by Infineon Technologies

PTVA101K02EVV1R250

Infineon Technologies

Infineon's PTVA101K02EVV1R250 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It's a COMMON SOURCE transistor for AMPLIFIER applications in ENHANCEMENT MODE. The package is CERAMIC/METAL-SEALED COFIRED, RECTANGULAR shape, FLANGE MOUNT style with 4 terminals and max temp of 225°C.
MHT1008NT1 by NXP Semiconductors

MHT1008NT1

NXP Semiconductors

NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.
AFT18H356-24SR6 by NXP Semiconductors

AFT18H356-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
GS61004B-MR by Gan Systems

GS61004B-MR

Gan Systems

GS61004B-MR by Gan Systems is an N-CHANNEL RF FET with 100V DS breakdown voltage, 45A ID, and -55°C min. operating temp. Ideal for SWITCHING applications in ENHANCEMENT MODE, this PLASTIC/EPOXY chip carrier FET offers SOURCE case connection and GOLD over NICKEL terminal finish.
TGF4230-EPU by Texas Instruments

TGF4230-EPU

Texas Instruments

TGF4230-EPU by Texas Instruments is an N-CHANNEL RF Power FET for X BAND applications. Features HETERO-JUNCTION tech with GALLIUM ARSENIDE material. Surface mount, 4 terminals, RECTANGULAR package ideal for high-frequency circuit designs.
A5G35S004NT6 by NXP Semiconductors

A5G35S004NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
PD57006-01 by STMicroelectronics

PD57006-01

STMicroelectronics

PD57006-01 by STMicroelectronics is an N-channel RF power FET designed for switching applications. It features a 65V breakdown voltage, operates at up to 1A drain current, and supports ultra-high frequency bands. Ideal for compact, high-performance circuits in various electronic devices.
MRF284S by Freescale Semiconductor

MRF284S

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-CDFP-F2; Terminal Form: FLAT;
PD54008L by STMicroelectronics

PD54008L

STMicroelectronics

PD54008L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount device excels in high-power scenarios with a dissipation of up to 44 W.
MRF1K50NR5 by NXP Semiconductors

MRF1K50NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
PD57045-E by STMicroelectronics

PD57045-E

STMicroelectronics

STMicroelectronics' PD57045-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 165°C.
AFT09MS007NT1 by Freescale Semiconductor

AFT09MS007NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;