Tt Electronics Plc - 2N2905A

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V; Qualification: Not Qualified;

Diodes Inc. BC807-40W-7 is a PNP BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates up to 150°C with 0.5A IC and 0.2W power dissipation.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

SMBTA42E6327HTSA1 by Infineon is a NPN BJT with max. VCE of 300V, IC of 0.5A, and hFE of 40. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and temp range up to 150°C. Its Gull Wing terminals make it suitable for surface mount designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

BC547BTF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 200 and nominal transition frequency of 300MHz, it offers reliable performance in a cylindrical package suitable for through-hole mounting. Operating at up to 150°C, this transistor has a max power dissipation of 0.625W making it versatile for various electronic designs.

SBC807-25LT1G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.7V, min DC current gain (hFE) of 160, and max collector-emitter voltage of 45V. It is commonly used for switching applications in various industries.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;

SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.

BC858B,215 by NXP Semiconductors is a PNP BJT for switching applications. With VCEsat of 0.65V and hFE of 220, it operates at max 150°C with IC of 0.1A. Its small outline package makes it suitable for surface mount designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-T3;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Shape: ROUND;