414002-1 by Tyco Electronics Amp | Connectors

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Manufacturer	Tyco Electronics Amp
Manufacturer's Part Number	414002-1
Description	RF SMB CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Contact Material: NOT SPECIFIED; Mounting Style: RIGHT ANGLE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
Datasheet	414002-1 Datasheet
In Stock	728

NAME	DESCRIPTION
Mating Contact Finish:	GOLD
Voltage Standing Wave Ratio:	1.51
Mating Info.:	MULTIPLE MATING PARTS AVAILABLE
IEC Conformity:	NO
Panel Mount:	NO
MIL Conformity:	NO
Contact Gender:	FEMALE
Connector Type:	RF SMB CONNECTOR
Contact Material:	NOT SPECIFIED
Manufacturer Series:	414002
Mounting Style:	RIGHT ANGLE
Other Names:	-CH1096-000-SI -414002-1-SI A4028 -CH1096-000-SI-ND
Insertion Loss:	.3 dB
Filter Feature:	NO
Mounting Type:	CABLE
JESD-609 Code:	e4
Coupling Type:	SNAP
Termination Contact Finish:	GOLD OVER NICKEL
Characteristic Impedance:	50 ohm
Insulator Material:	POLYTETRAFLUOROETHYLENE
Additional Features:	APPLICABLE CABLES: RG 174, RG 316, RG 188, RG 188A, INSERTION LOSS MAX. AT 3 GHZ
Option:	GENERAL PURPOSE
Maximum Operating Frequency:	4 GHz
Body or Shell Style:	PLUG
DIN Conformance:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
728	-	-

Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TE Connectivity's M39029/56-351 is a CRIMP contact type backshell accessory with rated voltage of 115V. It operates b/w -65 to 175 °C, suitable for MIL-C-39029/56 connectors with wire gauge ranging from 28 to 22 AWG. Ideal for military applications requiring female contacts and copper alloy material.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;