Tyco International, Ltd - 5000-04002

5000-04002 by Tyco International, Ltd

Image shown is a representation only.

Manufacturer	Tyco International, Ltd
Manufacturer's Part Number	5000-04002
Description	Hard Drives/Solid State Drives; Brand Name: Exacq; Product Type: Hard Drive; Storage Capacity: 4 TB; Wireless LAN: No; Product Name: 4TB Hot Spare Drive For Z-Series Servers And S-Series Enterprise Storage;

5000-04002 Technical Details

NAME	DESCRIPTION
Brand Name:	Exacq
Wireless LAN:	No
Product Type:	Hard Drive
Product Name:	4TB Hot Spare Drive For Z-Series Servers And S-Series Enterprise Storage
Drive Type:	Internal
Storage Capacity:	4 TB
Device Supported:	Server, Storage System, Video Surveillance System

Popular Products

LM107H/883

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

SMBJ18CA

Leshan Radio

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LM358N

Texas Instruments

LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.

BSS138

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

FDC5614P

MSKSEMI SEMICONDUCTOR

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

BAV99

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148WS

Changzhou Starsea Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;