199D476X0035F6B1E3 by Vishay Intertechnology | Capacitors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	199D476X0035F6B1E3
Description	TANTALUM CAPACITOR; Mounting Feature: THROUGH HOLE MOUNT; Capacitance: 47 uF; Rated DC Voltage (URdc): 35 V; Maximum Operating Temperature: 125 Cel; Dielectric Material: TANTALUM (DRY/SOLID);
Datasheet	199D476X0035F6B1E3 Datasheet
In Stock	417

NAME	DESCRIPTION
Capacitor Type:	TANTALUM CAPACITOR
Dielectric Material:	TANTALUM (DRY/SOLID)
Tan Delta:	0.08
Packing Method:	TR
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Leakage Current (mA):	0.007
Mounting Feature:	THROUGH HOLE MOUNT
No. of Terminals:	2
Package Style (Meter):	Radial
Terminal Shape:	WIRE
Positive Tolerance:	20 %
Package Shape:	DISK PACKAGE
Polarity:	POLARIZED
Capacitance:	47 uF
Negative Tolerance:	20 %
Maximum Operating Temperature:	125 Cel
Rated DC Voltage (URdc):	35 V
Terminal Pitch:	5.08 mm
Diameter:	9.6 mm

Pricing (USD)

Qty.	Unit Price	Ext. Price
417	-	-

LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;