562R5GAS10RE by Vishay Intertechnology | Capacitors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	562R5GAS10RE
Description	CERAMIC CAPACITOR; Capacitance: .01 uF; Rated DC Voltage (URdc): 1000 V; Maximum Operating Temperature: 105 Cel; Dielectric Material: CERAMIC; Height: 17.2 mm;
Datasheet	562R5GAS10RE Datasheet
In Stock	1,395

NAME	DESCRIPTION
Capacitor Type:	CERAMIC CAPACITOR
Dielectric Material:	CERAMIC
Packing Method:	TR
Size Code:	4916
Terminal Finish:	MATTE TIN OVER NICKEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	2
Temperature Coef (ppm/Cel):	-56/+22%
Package Style (Meter):	Radial
Length:	12.4 mm
Positive Tolerance:	20 %
Capacitance:	.01 uF
Negative Tolerance:	20 %
Temperature Characteristics Code:	Z5U
Maximum Operating Temperature:	105 Cel
Height:	17.2 mm
Rated DC Voltage (URdc):	1000 V
Terminal Pitch:	5 mm
Width:	4 mm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,395	-	-

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;