BAS85-M-18 by Vishay Intertechnology | Diodes

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	BAS85-M-18
Description	RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Datasheet	BAS85-M-18 Datasheet
In Stock	875

NAME	DESCRIPTION
Package Body Material:	GLASS
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Forward Voltage (VF):	.24 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	.2 A
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	END
Package Style (Meter):	LONG FORM
Technology:	SCHOTTKY
JESD-30 Code:	O-LELF-R2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WRAP AROUND
Maximum Operating Temperature:	125 Cel
Case Connection:	ISOLATED
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	30 V
Maximum Non Repetitive Peak Forward Current:	.6 A
Diode Element Material:	SILICON
Qualification:	Not Qualified
Maximum Power Dissipation:	.2 W
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Reverse Recovery Time:	.005 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
875	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;