BAV21W-E3-08 by Vishay Intertechnology | Diodes

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	BAV21W-E3-08
Description	RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	BAV21W-E3-08 Datasheet
In Stock	53,539

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Maximum Forward Voltage (VF):	1 V
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	.2 A
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	250 V
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Non Repetitive Peak Forward Current:	1 A
Diode Element Material:	SILICON
Maximum Power Dissipation:	.41 W
Peak Reflow Temperature (C):	260
Maximum Reverse Recovery Time:	.05 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
53,539	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;