DG2001EDV-T1-GE3 by Vishay Intertechnology | Other Function Semiconductors

Image shown is a representation only.

Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	DG2001EDV-T1-GE3
Description	SPDT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: TSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Datasheet	DG2001EDV-T1-GE3 Datasheet
In Stock	12,920

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Width (mm):	1.65 mm
Maximum Seated Height:	1.1 mm
Minimum Supply Voltage (Vsup):	1.8 V
Maximum Switch-on Time:	62 ns
Maximum Supply Current (Isup):	1 mA
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum On-state Resistance (Ron):	8 ohm
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G6
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
No. of Channels:	1
Package Code:	TSOP
Switching (V):	BREAK-BEFORE-MAKE
Nominal Supply Voltage (Vsup):	2 V
Moisture Sensitivity Level (MSL):	1
Minimum Input Voltage:	1.8 V
Maximum Input Voltage:	5.5 V
Nominal Off-state Isolation:	63 dB
Maximum Switch-off Time:	43 ns
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Package Equivalence Code:	SOP6,.11,37
Other IC type:	SPDT
Length:	3.05 mm
Output (V):	COMMON OUTPUT
Peak Reflow Temperature (C):	260
Terminal Pitch:	.95 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	5.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
12,920	$0.198	$2,558.160

MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;