DG2525DN-T1-GE4 by Vishay Intertechnology | Other Function Semiconductors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	DG2525DN-T1-GE4
Description	SPDT; No. of Terminals: 16; Package Code: SON; Package Shape: RECTANGULAR; Surface Mount: YES; Height: .6 mm;
Datasheet	DG2525DN-T1-GE4 Datasheet
In Stock	1,599

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Minimum Supply Voltage (Vsup):	1.8 V
Maximum Switch-on Time:	70000 ns
Nominal On-state Resistance Match:	.05 ohm
Surface Mount:	YES
Terminal Finish:	Palladium/Gold (Pd/Au) - with Nickel (Ni) barrier
No. of Terminals:	16
Maximum On-state Resistance (Ron):	.5 ohm
Terminal Position:	QUAD
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PQCC-N16
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
Height:	.6 mm
No. of Channels:	1
Package Code:	SON
Nominal Supply Voltage (Vsup):	3 V
Moisture Sensitivity Level (MSL):	1
Nominal Off-state Isolation:	55 dB
Maximum Switch-off Time:	3000 ns
Minimum Operating Temperature:	-40 Cel
No. of Functions:	4
Other IC type:	SPDT
Terminal Pitch:	.4 mm
Maximum Supply Voltage (Vsup):	5.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,599	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;