G003330R0JE1280 by Vishay Intertechnology | Resistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	G003330R0JE1280
Description	FIXED RESISTOR; Mounting Type: THROUGH HOLE MOUNT; Resistance: 330 ohm; Rated Power Dissipation (P): 2 W; Maximum Operating Temperature: 250 Cel; Tolerance: 5 %;
Datasheet	G003330R0JE1280 Datasheet
In Stock	54,352

NAME	DESCRIPTION
Sub-Category:	Fixed Resistors
Rated Temperature:	25 Cel
Terminal Finish:	Matte Tin (Sn) - with Nickel (Ni) barrier
No. of Terminals:	2
Package Style (Meter):	Axial
Length (Package):	10.31 mm
Technology:	WIRE WOUND
Operating Voltage:	25.6905 V
Maximum Operating Temperature:	250 Cel
Resistor Type:	FIXED RESISTOR
Shape (Package):	TUBULAR PACKAGE
Diameter (Package):	2.39 mm
Construction:	Tubular
Packing Method:	BULK
Tolerance:	5 %
Mounting Type:	THROUGH HOLE MOUNT
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Length (Lead):	38.1 mm
Diameter (Lead):	.508 mm
Resistance:	330 ohm
Temperature Coef (ppm/Cel):	20
Rated Power Dissipation (P):	2 W
Terminal Shape:	WIRE
Additional Features:	PRECISION
Reference Standard:	MIL-PRF-26

Pricing (USD)

Qty.	Unit Price	Ext. Price
54,352	$2.990	$162,512.480

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;

RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);