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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | IRFD320 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE; |
Datasheet | IRFD320 Datasheet |
In Stock | 79,108 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .49 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN LEAD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 1 W |
Terminal Position: | DUAL |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PDIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 1.8 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 400 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .5 A |