Image shown is a representation only.
| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | IRFDC20PBF |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 600 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | IRFDC20PBF Datasheet |
| In Stock | 2,639 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .32 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PDIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 4.4 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 600 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .32 A |
| Peak Reflow Temperature (C): | 260 |
