IRFR9014TRPBF-BE3 by Vishay Intertechnology | Transistors

Image shown is a representation only.

Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	IRFR9014TRPBF-BE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Additional Features: AVALANCHE RATED; Maximum Operating Temperature: 150 Cel;
Datasheet	IRFR9014TRPBF-BE3 Datasheet
In Stock	8,897

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.1 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.5 ohm
Avalanche Energy Rating (EAS):	140 mJ
Other Names:	742-IRFR9014TRPBF-BE3DKR 742-IRFR9014TRPBF-BE3TR 742-IRFR9014TRPBF-BE3CT
Maximum Feedback Capacitance (Crss):	31 pF
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	AVALANCHE RATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
8,897	-	-

TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;