IRLL110TRPBF-BE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	IRLL110TRPBF-BE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;
Datasheet	IRLL110TRPBF-BE3 Datasheet
In Stock	43,524

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.5 A
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	3.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.76 ohm
Maximum Feedback Capacitance (Crss):	15 pF
JEDEC-95 Code:	TO-261AA
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Additional Features:	AVALANCHE RATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
43,524	-	-

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