Vishay Intertechnology - J177

  1. Home
  2. Vishay Intertechnology - J177
J177 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number J177
Description P-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet J177 Datasheet
In Stock29
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .35 W
Field Effect Transistor Technology: JUNCTION
Maximum Operating Temperature: 150 Cel
Sub-Category: FET General Purpose Small Signal
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
29 - -

Popular Products

Category Top Products

2N7002BKM,315 by NXP Semiconductors

2N7002BKM,315

NXP Semiconductors

NXP Semiconductors' 2N7002BKM,315 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.45A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.7W. This chip carrier package has a max operating temperature of 150°C and features a built-in diode for efficient performance.
FDV305N_NL by Fairchild Semiconductor

FDV305N_NL

Fairchild Semiconductor

FDV305N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.9A Drain Current, and 0.22 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
NX3008CBKS,115 by Nexperia

NX3008CBKS,115

Nexperia

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .35 A; Terminal Form: GULL WING; No. of Terminals: 6;
NTR4101PT1G by Onsemi

NTR4101PT1G

Onsemi

NTR4101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 1.8A Drain Current, and 0.085 ohm On Resistance. With ENHANCEMENT MODE operation, it features GULL WING terminals in a RECTANGULAR package style for surface mount assembly at temperatures ranging from -55 to 150°C.
2N7002-G by Supertex

2N7002-G

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH INPUT IMPEDANCE; No. of Elements: 1; Terminal Finish: MATTE TIN;
DMN6075S-7 by Diodes Incorporated

DMN6075S-7

Diodes Incorporated

DMN6075S-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 2A ID, and 0.085 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.15W. Its small outline package makes it suitable for surface mount designs at temperatures ranging from -55 to 150°C.
BSS123 by Lite-on Semiconductor

BSS123

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;
2N7002BK,215 by Nexperia

2N7002BK,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
BS250P by Diodes Incorporated

BS250P

Diodes Incorporated

Diodes Inc.'s BS250P is a P-CHANNEL FET with 45V DS Breakdown Voltage and 0.23A Drain Current. Ideal for applications requiring low power dissipation, such as portable electronics. Features include ENHANCEMENT MODE operation, SILICON transistor element, and 150°C max operating temp.
BSS138 by Onsemi

BSS138

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
2N7002LT3G by Fairchild Semiconductor

2N7002LT3G

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Operating Mode: ENHANCEMENT MODE;
IRFHS9351TRPBF by Infineon Technologies

IRFHS9351TRPBF

Infineon Technologies

IRFHS9351TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS, 5.1A Drain Current, and 0.17 ohm On Resistance. With a max power dissipation of 1.4W and operating temperature up to 150°C, it's suitable for various electronic devices requiring high-performance transistors.
MGSF1N02LT1G by Onsemi

MGSF1N02LT1G

Onsemi

MGSF1N02LT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.09 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
2N7002K by NXP Semiconductors

2N7002K

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Minimum Operating Temperature: -65 Cel;
BSS123LT3G by Onsemi

BSS123LT3G

Onsemi

BSS123LT3G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. Its small outline package makes it suitable for surface mount designs.
FDS4672A by Onsemi

FDS4672A

Onsemi

FDS4672A by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It has 11A Drain Current, 0.013 ohm On Resistance, and operates at max temp of 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
NDS331N/D87Z by National Semiconductor

NDS331N/D87Z

National Semiconductor

NDS331N/D87Z by National Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.21 ohm Drain-Source Resistance, and 1.3A Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
BF862 by NXP Semiconductors

BF862

NXP Semiconductors

NXP Semiconductors' BF862 is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max power dissipation of 0.225W and max drain current of 0.04A. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly at temperatures up to 150°C.
IRF9310TRPBF-1 by International Rectifier

IRF9310TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8;
BSS123LT3 by Onsemi

BSS123LT3

Onsemi

BSS123LT3 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.