MAL213836229E3 by Vishay Intertechnology | Capacitors

Image shown is a representation only.

Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	MAL213836229E3
Description	ALUMINUM ELECTROLYTIC CAPACITOR; Mounting Feature: THROUGH HOLE MOUNT; Capacitance: 22 uF; Rated DC Voltage (URdc): 25 V; Maximum Operating Temperature: 105 Cel; Dielectric Material: ALUMINUM (WET);
Datasheet	MAL213836229E3 Datasheet
In Stock	661

NAME	DESCRIPTION
Capacitor Type:	ALUMINUM ELECTROLYTIC CAPACITOR
Dielectric Material:	ALUMINUM (WET)
Equivalent Series Resistance / ESR (mohm ):	10000
Tan Delta:	0.14
Terminal Finish:	MATTE TIN
Leakage Current (mA):	0.0051
No. of Terminals:	2
Package Style (Meter):	Axial
Package Shape:	TUBULAR PACKAGE
Polarity:	POLARIZED
Maximum Operating Temperature:	105 Cel
Diameter:	6.5 mm
Other Names:	4212PHCT 222213836229 4212PHCT-NDR 2222 138 36229 4212PHTB 4212PHTB-NDR
Packing Method:	AMMO PACK
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Mounting Feature:	THROUGH HOLE MOUNT
Length:	12.9 mm
Terminal Shape:	WIRE
Positive Tolerance:	20 %
Ripple Current (mA):	61
Capacitance:	22 uF
Negative Tolerance:	20 %
Rated DC Voltage (URdc):	25 V
Terminal Pitch:	17.5 mm

Pricing (USD)

Qty.	Unit Price	Ext. Price
661	-	-

MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;

Yageo's RC0805FR-0710RL is a 10 ohm SMT fixed resistor with 1% tolerance and 0.125 W power dissipation. With a temperature range of -55 to 155 °C, it suits applications requiring precise resistance values in compact surface mount designs.

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.