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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SI1026X-T1-GE3 |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; |
Datasheet | SI1026X-T1-GE3 Datasheet |
In Stock | 53,905 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .305 A |
Sub-Category: | FET General Purpose Powers |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 6 |
Maximum Power Dissipation (Abs): | .28 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 1.4 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Additional Features: | LOW THRESHOLD |
Maximum Drain Current (Abs) (ID): | .305 A |
Peak Reflow Temperature (C): | 260 |