Vishay Intertechnology - SI1401EDH-T1-GE3

  1. Home
  2. Vishay Intertechnology - SI1401EDH-T1-GE3
SI1401EDH-T1-GE3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI1401EDH-T1-GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
Datasheet SI1401EDH-T1-GE3 Datasheet
In Stock11,331
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .034 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 4 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
11,331 - -

Popular Products

Category Top Products

FDS9431A_F085 by Fairchild Semiconductor

FDS9431A_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDS9431A_F085 is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating at up to 150°C, this MOSFET has 0.13 ohm On Resistance and GULL WING terminals for surface mounting.
IRLML2803TRPBF by Infineon Technologies

IRLML2803TRPBF

Infineon Technologies

Infineon's IRLML2803TRPBF is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.2A Drain Current, 0.25 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY package, it can handle temperatures from -55 to 150 °C.
BS170 by NXP Semiconductors

BS170

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): CYLINDRICAL;
2N7000_D74Z by Fairchild Semiconductor

2N7000_D74Z

Fairchild Semiconductor

2N7000_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A Drain Current and 5 ohm On Resistance. Suitable for low-power circuits due to its 0.4W Power Dissipation and 150°C Operating Temperature range.
2N7002DW by Jiangsu Changjiang Electronics Technology

2N7002DW

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .115 A;
IRLML2803GTRPBF by International Rectifier

IRLML2803GTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-236AB;
FDN327N by Onsemi

FDN327N

Onsemi

FDN327N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.07 ohm On Resistance and can handle up to 0.46W power dissipation at 150°C.
2N7002DWG by Changzhou Galaxy Century Microelectronics

2N7002DWG

Changzhou Galaxy Century Microelectronics

Small Signal Field-Effect Transistors;
BSS123_R1_00001 by Panjit International

BSS123_R1_00001

Panjit International

Panjit International's BSS123_R1_00001 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has GULL WING terminals and matte tin finish.
SBSS84LT1G by Onsemi

SBSS84LT1G

Onsemi

SBSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.13A Drain Current, and 10Ω On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has GULL WING terminals and can handle up to 150°C temperature.
ZXMS6004FFQTA by Diodes Incorporated

ZXMS6004FFQTA

Diodes Incorporated

ZXMS6004FFQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and -40 to 150 °C operating temp. Ideal for SWITCHING applications in automotive (AEC-Q101) due to ENHANCEMENT MODE tech and built-in diode.
SI2319DS-T1-GE3 by Vishay Intertechnology

SI2319DS-T1-GE3

Vishay Intertechnology

SI2319DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The transistor features a built-in DIODE, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package style.
ZXMP10A13FTA by Zetex Plc

ZXMP10A13FTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
NDC7001C by Onsemi

NDC7001C

Onsemi

NDC7001C by Onsemi is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.51A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BS170 by Infineon Technologies

BS170

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Form: THROUGH-HOLE; Terminal Finish: TIN LEAD;
BSS84 by National Semiconductor

BSS84

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;
IRF9310TRPBF-1 by Infineon Technologies

IRF9310TRPBF-1

Infineon Technologies

Infineon's IRF9310TRPBF-1 is a P-channel FET with 30V breakdown voltage, 20A max drain current, and 0.0046 ohm on-resistance. Ideal for enhancement mode operation in applications requiring high power efficiency and compact design. Features gull wing terminals in a small outline package for surface mount assembly.
FDC658P by Onsemi

FDC658P

Onsemi

FDC658P by Onsemi is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in enhancement mode. With a max drain current of 4A and a max power dissipation of 1.6W, it offers reliable performance in various electronic circuits.
2N7002K by Hy Electronic

2N7002K

Hy Electronic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Additional Features: ULTRA LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY;
2N7002 by Infineon Technologies

2N7002

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;