Vishay Intertechnology - SI2301BDS-T1

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SI2301BDS-T1 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI2301BDS-T1
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet SI2301BDS-T1 Datasheet
In Stock149
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .9 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.2 A
Maximum Drain Current (Abs) (ID): 2.2 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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Pricing (USD)

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