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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SI2333DS-T1 |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (ID): 4.1 A; Maximum Operating Temperature: 150 Cel; |
| Datasheet | SI2333DS-T1 Datasheet |
| In Stock | 1,371 |
| NAME | DESCRIPTION |
|---|---|
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 4.1 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| Maximum Power Dissipation (Abs): | 1.25 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 4.1 A |









