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Manufacturer | Vishay Intertechnology |
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Manufacturer's Part Number | SI3127DV-T1-GE3 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain-Source On Resistance: .089 ohm; Moisture Sensitivity Level (MSL): 1; |
Datasheet | SI3127DV-T1-GE3 Datasheet |
In Stock | 66,101 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 5.1 A |
JEDEC-95 Code: | MO-193AA |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
JESD-609 Code: | e3 |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 60 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G6 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .089 ohm |
Moisture Sensitivity Level (MSL): | 1 |